Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs
Abstract
Description
In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.
4 pages, 1 figure
4 pages, 1 figure