Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs

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dc.creatorCristea, Miron J.
dc.date2006-09-15
dc.date.accessioned2026-07-07T07:23:34Z
dc.date.available2026-07-07T07:23:34Z
dc.descriptionIn this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.
dc.description4 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0609368
dc.identifierhttp://arxiv.org/abs/cond-mat/0609368
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116028
dc.subjectMaterials Science
dc.titleAnalytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs
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