Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures it is of pure orbital nature originating from the quantum interference of different pathways contributing to the light absorption.
5 pages, 4 figures

Keywords

Mesoscale and Nanoscale Physics

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/167052

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0808.1987
 http://arxiv.org/abs/0808.1987

Collections

arXiv