Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs

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dc.creatorOlbrich, P.
dc.creatorTarasenko, S. A.
dc.creatorReitmaier, C.
dc.creatorKarch, J.
dc.creatorPlohmann, D.
dc.creatorKvon, Z. D.
dc.creatorGanichev, S. D.
dc.date2008-08-14
dc.date.accessioned2026-07-07T09:56:39Z
dc.date.available2026-07-07T09:56:39Z
dc.descriptionWe report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures it is of pure orbital nature originating from the quantum interference of different pathways contributing to the light absorption.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0808.1987
dc.identifierhttp://arxiv.org/abs/0808.1987
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/167052
dc.subjectMesoscale and Nanoscale Physics
dc.titlePhotogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs
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