Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

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dc.creatorBrammertz, Guy
dc.creatorMols, Yves
dc.creatorDegroote, Stefan
dc.creatorMotsnyi, Vasyl
dc.creatorLeys, Maarten
dc.creatorBorghs, Gustaaf
dc.creatorCaymax, Matty
dc.date2007-03-26
dc.date.accessioned2026-07-07T07:53:46Z
dc.date.available2026-07-07T07:53:46Z
dc.descriptionThin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.
dc.description19 pages, 14 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703661
dc.identifierhttp://arxiv.org/abs/cond-mat/0703661
dc.identifierJ. Appl. Phys. 99, 093514, 2006
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126347
dc.subjectMaterials Science
dc.titleLow temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
dc.typetext

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