Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.
12 pages, 12 figures, submitted to New Journal of Physics

Keywords

Mesoscale and Nanoscale Physics, Materials Science

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/161654

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0805.3998
 http://arxiv.org/abs/0805.3998

Collections

arXiv