Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

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dc.creatorWang, K Y
dc.creatorIrvine, A C
dc.creatorWunderlich, J
dc.creatorEdmonds, K W
dc.creatorRushforth, A W
dc.creatorCampion, R P
dc.creatorFoxon, C T
dc.creatorWilliams, D A
dc.creatorGallagher, B L
dc.date2008-05-26
dc.date.accessioned2026-07-07T09:40:56Z
dc.date.available2026-07-07T09:40:56Z
dc.descriptionWe investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.
dc.description12 pages, 12 figures, submitted to New Journal of Physics
dc.identifierhttps://arxiv.org/abs/0805.3998
dc.identifierhttp://arxiv.org/abs/0805.3998
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/161654
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleMagnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
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