Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System
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We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $σ_{xx}$ and $σ_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $ν=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<ν<5$, there is a temperature-independent point in $ρ_{xx} (B)$, $ρ_{xy} (B)$, $σ_{xx}$, and $σ_{xy}$ which corresponds to a boundary of the quantum phase transition.
We correct the errors about the formats for figures in the PDF file
We correct the errors about the formats for figures in the PDF file