Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System

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dc.creatorLiang, C. T.
dc.creatorHuang, C. F.
dc.creatorCheng, Yu-Ming
dc.creatorHuang, Tsai-Yu
dc.creatorChang, Y. H.
dc.creatorChen, Y. F.
dc.date2002-01-18
dc.date2002-03-23
dc.date.accessioned2026-07-07T02:44:11Z
dc.date.available2026-07-07T02:44:11Z
dc.descriptionWe have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $σ_{xx}$ and $σ_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $ν=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<ν<5$, there is a temperature-independent point in $ρ_{xx} (B)$, $ρ_{xy} (B)$, $σ_{xx}$, and $σ_{xy}$ which corresponds to a boundary of the quantum phase transition.
dc.descriptionWe correct the errors about the formats for figures in the PDF file
dc.identifierhttps://arxiv.org/abs/cond-mat/0201333
dc.identifierhttp://arxiv.org/abs/cond-mat/0201333
dc.identifierChinese Journal of Physics, 39, L305 (2001)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18811
dc.subjectMesoscale and Nanoscale Physics
dc.titleStudies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System
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