The metal-insulator transition in semiconductors
Abstract
Description
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)
3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)