The metal-insulator transition in semiconductors

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dc.creatorPrigara, Fedor V.
dc.date2009-02-25
dc.date.accessioned2026-07-07T12:46:43Z
dc.date.available2026-07-07T12:46:43Z
dc.descriptionThe temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
dc.description3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)
dc.identifierhttps://arxiv.org/abs/0902.4350
dc.identifierhttp://arxiv.org/abs/0902.4350
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/221480
dc.subjectStatistical Mechanics
dc.titleThe metal-insulator transition in semiconductors
dc.typetext

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