Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

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InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
11 pages, 4 figures, Journal

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/136172

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0708.2221
 http://arxiv.org/abs/0708.2221
 Applied Physics Letters 88 (24) 241904 (2006)
 doi:10.1063/1.2186101

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arXiv