Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

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dc.creatorDhara, S.
dc.creatorMagudapathy, P.
dc.creatorKesavamoorthy, R.
dc.creatorKalavathi, S.
dc.creatorSastry, V. S.
dc.creatorNair, K. G. M.
dc.creatorHsu, G. M.
dc.creatorChen, L. C.
dc.creatorChen, K. H.
dc.creatorSanthakumar, K.
dc.creatorSoga, T.
dc.date2007-08-16
dc.date.accessioned2026-07-07T08:23:56Z
dc.date.available2026-07-07T08:23:56Z
dc.descriptionInN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
dc.description11 pages, 4 figures, Journal
dc.identifierhttps://arxiv.org/abs/0708.2221
dc.identifierhttp://arxiv.org/abs/0708.2221
dc.identifierApplied Physics Letters 88 (24) 241904 (2006)
dc.identifierdoi:10.1063/1.2186101
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/136172
dc.subjectMaterials Science
dc.titleNitrogen ion beam synthesis of InN in InP (100) at elevated temperature
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