New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

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Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.
LaTeX, 12 pages, 7 figures

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Mesoscale and Nanoscale Physics, Strongly Correlated Electrons

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http://salesiana.dossiersoluciones.com/handle/123456789/230238

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0905.2142
 http://arxiv.org/abs/0905.2142

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arXiv