New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

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dc.creatorSheka, D. I.
dc.creatorTretyak, O. V.
dc.creatorKorol, A. M.
dc.creatorSen, A. K.
dc.creatorMookerjee, A.
dc.date2009-05-13
dc.date.accessioned2026-07-07T13:14:32Z
dc.date.available2026-07-07T13:14:32Z
dc.descriptionElectronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.
dc.descriptionLaTeX, 12 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/0905.2142
dc.identifierhttp://arxiv.org/abs/0905.2142
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230238
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleNew Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures
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