Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

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Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.
Submission: 31st July 2008, Accepted for publication in Appl. Phys. Lett

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Superconductivity

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http://salesiana.dossiersoluciones.com/handle/123456789/172140

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0808.1956
 http://arxiv.org/abs/0808.1956
 Appl. Phys. Lett. 93, 162504 (2008)
 doi:10.1063/1.2996591

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arXiv