Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

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dc.creatorHiramatsu, Hidenori
dc.creatorKatase, Takayoshi
dc.creatorKamiya, Toshio
dc.creatorHirano, Masahiro
dc.creatorHosono, Hideo
dc.date2008-08-14
dc.date2008-09-19
dc.date.accessioned2026-07-07T10:12:18Z
dc.date.available2026-07-07T10:12:18Z
dc.descriptionEpitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.
dc.descriptionSubmission: 31st July 2008, Accepted for publication in Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/0808.1956
dc.identifierhttp://arxiv.org/abs/0808.1956
dc.identifierAppl. Phys. Lett. 93, 162504 (2008)
dc.identifierdoi:10.1063/1.2996591
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172140
dc.subjectSuperconductivity
dc.titleHeteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO
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