Minimum Metallic Mobility in a Two-Dimensional Electron Gas

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We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high enough ($μ~> 1 m^2/Vs$), consistent with the assertion that this transition is driven by electron-electron interactions. In a perpendicular magnetic field, the magnetoconductance is positive in the vicinity of the transition, but negative elsewhere. Our experiment suggests that such behavior results from a decrease of the spin-dependent part of the interaction in the vicinity of the transition.
4 pages, RevTeX/Latex, with 5 figures

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Strongly Correlated Electrons, Disordered Systems and Neural Networks, Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/151768

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/9704249
 http://arxiv.org/abs/cond-mat/9704249

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arXiv