Minimum Metallic Mobility in a Two-Dimensional Electron Gas

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dc.creatorPopovic, Dragana
dc.creatorFowler, A. B.
dc.creatorWashburn, S.
dc.date1997-04-30
dc.date.accessioned2026-07-07T09:11:41Z
dc.date.available2026-07-07T09:11:41Z
dc.descriptionWe report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high enough ($μ~> 1 m^2/Vs$), consistent with the assertion that this transition is driven by electron-electron interactions. In a perpendicular magnetic field, the magnetoconductance is positive in the vicinity of the transition, but negative elsewhere. Our experiment suggests that such behavior results from a decrease of the spin-dependent part of the interaction in the vicinity of the transition.
dc.description4 pages, RevTeX/Latex, with 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9704249
dc.identifierhttp://arxiv.org/abs/cond-mat/9704249
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151768
dc.subjectStrongly Correlated Electrons
dc.subjectDisordered Systems and Neural Networks
dc.subjectMesoscale and Nanoscale Physics
dc.titleMinimum Metallic Mobility in a Two-Dimensional Electron Gas
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