Interface Magnetoresistance in Manganite-Titanate Heterojunctions

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We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate a new form of magnetoresistance arising from magnetic field changes of the interface band diagram via the strong electron-spin coupling in manganites.
4 pages, 4 figures

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Strongly Correlated Electrons, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/116016

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0609315
 http://arxiv.org/abs/cond-mat/0609315

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arXiv