Interface Magnetoresistance in Manganite-Titanate Heterojunctions

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dc.creatorSusaki, T.
dc.creatorNakagawa, N.
dc.creatorHwang, H. Y.
dc.date2006-09-13
dc.date.accessioned2026-07-07T07:23:32Z
dc.date.available2026-07-07T07:23:32Z
dc.descriptionWe have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate a new form of magnetoresistance arising from magnetic field changes of the interface band diagram via the strong electron-spin coupling in manganites.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0609315
dc.identifierhttp://arxiv.org/abs/cond-mat/0609315
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116016
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleInterface Magnetoresistance in Manganite-Titanate Heterojunctions
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