Characterization of Disorder in Semiconductors via Single-Photon Interferometry

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The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.
4 pages, 2 figures, accepted for PRL

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Disordered Systems and Neural Networks

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http://salesiana.dossiersoluciones.com/handle/123456789/118720

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0611411
 http://arxiv.org/abs/cond-mat/0611411
 Physical Review Letters 97, 227402 (2006)
 doi:10.1103/PhysRevLett.97.227402

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arXiv