Characterization of Disorder in Semiconductors via Single-Photon Interferometry

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dc.creatorBozsoki, P.
dc.creatorThomas, P.
dc.creatorKira, M.
dc.creatorHoyer, W.
dc.creatorMeier, T.
dc.creatorKoch, S. W.
dc.creatorMaschke, K.
dc.creatorVarga, I.
dc.creatorStolz, H.
dc.date2006-11-15
dc.date.accessioned2026-07-07T07:31:21Z
dc.date.available2026-07-07T07:31:21Z
dc.descriptionThe method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.
dc.description4 pages, 2 figures, accepted for PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0611411
dc.identifierhttp://arxiv.org/abs/cond-mat/0611411
dc.identifierPhysical Review Letters 97, 227402 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.227402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/118720
dc.subjectDisordered Systems and Neural Networks
dc.titleCharacterization of Disorder in Semiconductors via Single-Photon Interferometry
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