Single Spin State Detection for the Kane Model of Silicon-Based Quantum Computer
Abstract
Description
The scheme for measurement of the state of a single spin (or a few spin system) based on the single-electron turnstile and injection of spin polarized electrons from magnetic metal contacts is proposed. Applications to the recent proposal concerning the spin gates based on a silicon matrix (B.Kane, Nature, {\bf 393}, 133 (1998)) are discussed.
6 pages, 2 figures
6 pages, 2 figures