Single Spin State Detection for the Kane Model of Silicon-Based Quantum Computer

Simple item page
dc.creatorMolotkov, S. N.
dc.creatorNazin, S. S.
dc.date1999-06-28
dc.date.accessioned2026-07-07T06:16:42Z
dc.date.available2026-07-07T06:16:42Z
dc.descriptionThe scheme for measurement of the state of a single spin (or a few spin system) based on the single-electron turnstile and injection of spin polarized electrons from magnetic metal contacts is proposed. Applications to the recent proposal concerning the spin gates based on a silicon matrix (B.Kane, Nature, {\bf 393}, 133 (1998)) are discussed.
dc.description6 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/quant-ph/9906106
dc.identifierhttp://arxiv.org/abs/quant-ph/9906106
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/94147
dc.subjectQuantum Physics
dc.titleSingle Spin State Detection for the Kane Model of Silicon-Based Quantum Computer
dc.typetext

Files

Collections

arXiv