Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

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We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays on a distance of the order of 50 - 100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.
15 pages, 5 figures, accepted for publication in J. Phys.: Condens. Matter

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/105593

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0512414
 http://arxiv.org/abs/cond-mat/0512414
 J. Phys.: Condens. Matter 18 1535-1544 (2006)
 doi:10.1088/0953-8984/18/5/005

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