Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

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dc.creatorSaikin, Semion
dc.creatorShen, Min
dc.creatorCheng, Ming-Cheng
dc.date2005-12-16
dc.date.accessioned2026-07-07T06:53:27Z
dc.date.available2026-07-07T06:53:27Z
dc.descriptionWe demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays on a distance of the order of 50 - 100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.
dc.description15 pages, 5 figures, accepted for publication in J. Phys.: Condens. Matter
dc.identifierhttps://arxiv.org/abs/cond-mat/0512414
dc.identifierhttp://arxiv.org/abs/cond-mat/0512414
dc.identifierJ. Phys.: Condens. Matter 18 1535-1544 (2006)
dc.identifierdoi:10.1088/0953-8984/18/5/005
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105593
dc.subjectMesoscale and Nanoscale Physics
dc.titleSpin dynamics in a compound semiconductor spintronic structure with a Schottky barrier
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