Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions

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Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of diffused semiconductor junctions. The measurement technique for the determination of the built-in voltage is also described.
4 pages

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/124696

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0702324
 http://arxiv.org/abs/cond-mat/0702324

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arXiv