Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions

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dc.creatorCristea, Miron J.
dc.date2007-02-14
dc.date2007-02-28
dc.date.accessioned2026-07-07T07:48:59Z
dc.date.available2026-07-07T07:48:59Z
dc.descriptionBased on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of diffused semiconductor junctions. The measurement technique for the determination of the built-in voltage is also described.
dc.description4 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0702324
dc.identifierhttp://arxiv.org/abs/cond-mat/0702324
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124696
dc.subjectMaterials Science
dc.titleAnalytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions
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