Reply to Comment (cond-mat/0311174)

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We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
4 pages, 3 figures. More data included

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Strongly Correlated Electrons, Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/23049

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0401031
 http://arxiv.org/abs/cond-mat/0401031

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arXiv