Reply to Comment (cond-mat/0311174)

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dc.creatorPudalov, V. M.
dc.creatorGershenson, M. E.
dc.creatorKojima, H.
dc.creatorBrunthaler, G.
dc.creatorBauer, G.
dc.date2004-01-05
dc.date2004-04-16
dc.date.accessioned2026-07-07T02:55:44Z
dc.date.available2026-07-07T02:55:44Z
dc.descriptionWe demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
dc.description4 pages, 3 figures. More data included
dc.identifierhttps://arxiv.org/abs/cond-mat/0401031
dc.identifierhttp://arxiv.org/abs/cond-mat/0401031
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23049
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleReply to Comment (cond-mat/0311174)
dc.typetext

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