Strong enhancement of the valley splitting in a 2D electron system in silicon

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Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at ν=1 and ν=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases LINEARLY with magnetic field. This result has not been explained by existing theories.
As published. 4 pages, 3 figures

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Condensed Matter

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http://salesiana.dossiersoluciones.com/handle/123456789/18973

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0202505
 http://arxiv.org/abs/cond-mat/0202505
 Phys. Rev. B 67, 113305 (2003)
 doi:10.1103/PhysRevB.67.113305

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arXiv