Strong enhancement of the valley splitting in a 2D electron system in silicon

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dc.creatorKhrapai, V. S.
dc.creatorShashkin, A. A.
dc.creatorDolgopolov, V. T.
dc.date2002-02-27
dc.date2002-12-23
dc.date.accessioned2026-07-07T02:44:34Z
dc.date.available2026-07-07T02:44:34Z
dc.descriptionUsing magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at ν=1 and ν=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases LINEARLY with magnetic field. This result has not been explained by existing theories.
dc.descriptionAs published. 4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0202505
dc.identifierhttp://arxiv.org/abs/cond-mat/0202505
dc.identifierPhys. Rev. B 67, 113305 (2003)
dc.identifierdoi:10.1103/PhysRevB.67.113305
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18973
dc.subjectCondensed Matter
dc.titleStrong enhancement of the valley splitting in a 2D electron system in silicon
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