Non-activated transport of strongly interacting two-dimensional holes in GaAs

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We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.
5 pages, 4 figures

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Mesoscale and Nanoscale Physics, Strongly Correlated Electrons

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http://salesiana.dossiersoluciones.com/handle/123456789/130298

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0603053
 http://arxiv.org/abs/cond-mat/0603053
 Phys. Rev. B 74, 201302(R) (2006)
 doi:10.1103/PhysRevB.74.201302

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arXiv