Non-activated transport of strongly interacting two-dimensional holes in GaAs

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dc.creatorHuang, Jian
dc.creatorNovikov, D. S.
dc.creatorTsui, D. C.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.date2006-03-02
dc.date2006-10-11
dc.date.accessioned2026-07-07T08:05:29Z
dc.date.available2026-07-07T08:05:29Z
dc.descriptionWe report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0603053
dc.identifierhttp://arxiv.org/abs/cond-mat/0603053
dc.identifierPhys. Rev. B 74, 201302(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.74.201302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/130298
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleNon-activated transport of strongly interacting two-dimensional holes in GaAs
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