Towards device-size atomistic models of amorphous silicon

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

The atomic structure of amorphous materials is believed to be well described by the continuous random network model. We present an algorithm for the generation of large, high-quality continuous random networks. The algorithm is a variation of the "sillium" approach introduced by Wooten, Winer, and Weaire. By employing local relaxation techniques, local atomic rearrangements can be tried that scale almost independently of system size. This scaling property of the algorithm paves the way for the generation of realistic device-size atomic networks.
7 pages, 3 figures

Keywords

Materials Science

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/95465

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0107358
 http://arxiv.org/abs/cond-mat/0107358
 Phys. Rev. B 64, 245214 (2001)
 doi:10.1103/PhysRevB.64.245214

Collections

arXiv