Towards device-size atomistic models of amorphous silicon

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dc.creatorVink, R. L. C.
dc.creatorBarkema, G. T.
dc.creatorStijnman, M. A.
dc.creatorBisseling, R. H.
dc.date2001-07-17
dc.date.accessioned2026-07-07T06:20:59Z
dc.date.available2026-07-07T06:20:59Z
dc.descriptionThe atomic structure of amorphous materials is believed to be well described by the continuous random network model. We present an algorithm for the generation of large, high-quality continuous random networks. The algorithm is a variation of the "sillium" approach introduced by Wooten, Winer, and Weaire. By employing local relaxation techniques, local atomic rearrangements can be tried that scale almost independently of system size. This scaling property of the algorithm paves the way for the generation of realistic device-size atomic networks.
dc.description7 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0107358
dc.identifierhttp://arxiv.org/abs/cond-mat/0107358
dc.identifierPhys. Rev. B 64, 245214 (2001)
dc.identifierdoi:10.1103/PhysRevB.64.245214
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95465
dc.subjectMaterials Science
dc.titleTowards device-size atomistic models of amorphous silicon
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