Self-organized superlattice formation in II-VI and III-V semiconductors
Abstract
Description
There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II-VI and III-V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.
RevTeX, 9 pages, 1 ps figure, to appear in Applied Physics Letters
RevTeX, 9 pages, 1 ps figure, to appear in Applied Physics Letters