Self-organized superlattice formation in II-VI and III-V semiconductors

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dc.creatorBarabási, Albert-László
dc.date1997-03-27
dc.date.accessioned2026-07-07T09:11:38Z
dc.date.available2026-07-07T09:11:38Z
dc.descriptionThere is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II-VI and III-V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.
dc.descriptionRevTeX, 9 pages, 1 ps figure, to appear in Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/9703242
dc.identifierhttp://arxiv.org/abs/cond-mat/9703242
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151748
dc.subjectStatistical Mechanics
dc.titleSelf-organized superlattice formation in II-VI and III-V semiconductors
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