Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

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We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.
22 pages, 6 figures, submitted to J. Appl. Phys

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/142531

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0610277
 http://arxiv.org/abs/cond-mat/0610277
 J. Appl. Phys. 101, 04302 (2007)
 doi:10.1063/1.2717544

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arXiv