Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

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dc.creatorParge, Anne
dc.creatorNiermann, Tore
dc.creatorSeibt, Michael
dc.creatorMünzenberg, Markus
dc.date2006-10-10
dc.date.accessioned2026-07-07T08:44:04Z
dc.date.available2026-07-07T08:44:04Z
dc.descriptionWe present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.
dc.description22 pages, 6 figures, submitted to J. Appl. Phys
dc.identifierhttps://arxiv.org/abs/cond-mat/0610277
dc.identifierhttp://arxiv.org/abs/cond-mat/0610277
dc.identifierJ. Appl. Phys. 101, 04302 (2007)
dc.identifierdoi:10.1063/1.2717544
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142531
dc.subjectMaterials Science
dc.titleNanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices
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