Alloy effects in GaInN/GaN heterostructures

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We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures.
submitted to Applied Physics Letter

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Condensed Matter

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http://salesiana.dossiersoluciones.com/handle/123456789/22627

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0311133
 http://arxiv.org/abs/cond-mat/0311133
 Solid State Communications 130 (2004) 751

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arXiv