Alloy effects in GaInN/GaN heterostructures

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dc.creatorNguyen, Duc Phuong
dc.creatorRegnault, Nicolas
dc.creatorFerreira, Robson
dc.creatorBastard, Gerald
dc.date2003-11-06
dc.date.accessioned2026-07-07T02:54:38Z
dc.date.available2026-07-07T02:54:38Z
dc.descriptionWe show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures.
dc.descriptionsubmitted to Applied Physics Letter
dc.identifierhttps://arxiv.org/abs/cond-mat/0311133
dc.identifierhttp://arxiv.org/abs/cond-mat/0311133
dc.identifierSolid State Communications 130 (2004) 751
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22627
dc.subjectCondensed Matter
dc.titleAlloy effects in GaInN/GaN heterostructures
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