Quantum Mott transition in a silicon quantum dot

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Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
6 pages, 2 figures in eps

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/28108

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/9802227
 http://arxiv.org/abs/cond-mat/9802227

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arXiv