Quantum Mott transition in a silicon quantum dot

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dc.creatorVyshenski, S. V.
dc.creatorZeitler, U.
dc.creatorHaug, R. J.
dc.date1998-02-21
dc.date.accessioned2026-07-07T03:09:59Z
dc.date.available2026-07-07T03:09:59Z
dc.descriptionConsidering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
dc.description6 pages, 2 figures in eps
dc.identifierhttps://arxiv.org/abs/cond-mat/9802227
dc.identifierhttp://arxiv.org/abs/cond-mat/9802227
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28108
dc.subjectMesoscale and Nanoscale Physics
dc.titleQuantum Mott transition in a silicon quantum dot
dc.typetext

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