Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

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We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.
5 pages, 7 figures

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/216804

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0901.3210
 http://arxiv.org/abs/0901.3210
 New Journal of Physics 10 (2008) 073001 (9pp)
 doi:10.1088/1367-2630/10/7/073001

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arXiv