Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

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dc.creatorDengel, R. G.
dc.creatorGould, C.
dc.creatorWenisch, J.
dc.creatorBrunner, K.
dc.creatorSchmidt, G.
dc.creatorMolenkamp, L. W.
dc.date2009-01-21
dc.date.accessioned2026-07-07T12:32:31Z
dc.date.available2026-07-07T12:32:31Z
dc.descriptionWe use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.
dc.description5 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/0901.3210
dc.identifierhttp://arxiv.org/abs/0901.3210
dc.identifierNew Journal of Physics 10 (2008) 073001 (9pp)
dc.identifierdoi:10.1088/1367-2630/10/7/073001
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/216804
dc.subjectMesoscale and Nanoscale Physics
dc.titleLateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer
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