Graphene Nano-Ribbon Electronics

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.
6 pages, 7 figures

Keywords

Materials Science, Mesoscale and Nanoscale Physics

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/144276

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0701599
 http://arxiv.org/abs/cond-mat/0701599
 Physica E: Low-dimensional Systems and Nanostructures, Vol. 40/2, pp 228-232 (2007)
 doi:10.1016/j.physe.2007.06.020

Collections

arXiv