Graphene Nano-Ribbon Electronics
| dc.creator | Chen, Zhihong | |
| dc.creator | Lin, Yu-Ming | |
| dc.creator | Rooks, Michael J. | |
| dc.creator | Avouris, Phaedon | |
| dc.date | 2007-01-24 | |
| dc.date.accessioned | 2026-07-07T08:49:23Z | |
| dc.date.available | 2026-07-07T08:49:23Z | |
| dc.description | We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise. | |
| dc.description | 6 pages, 7 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0701599 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0701599 | |
| dc.identifier | Physica E: Low-dimensional Systems and Nanostructures, Vol. 40/2, pp 228-232 (2007) | |
| dc.identifier | doi:10.1016/j.physe.2007.06.020 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/144276 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Graphene Nano-Ribbon Electronics | |
| dc.type | text |