Anisotropic Magnetoresistance in GaMnAs films

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The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.
Presented at ICPS-26, July 2002

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Materials Science, Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/20420

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0211697
 http://arxiv.org/abs/cond-mat/0211697

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arXiv